Visualizing In-Plane Junctions in Nitrogen-Doped Graphene
Controlling the spatial distribution of dopants in graphene is the gateway to the realization of graphene-based electronic components. Here, it is shown that a submonolayer of self-assembled physisorbed molecules can be used as a resist during a post-synthesis nitrogen doping process to realize a nanopatterning of nitrogen dopants in graphene. The resulting formation of domains with different nitrogen concentrations allows obtaining n–n’ and p–n junctions in graphene. A scanning tunneling microscopy is used to measure the electronic properties of the junctions at the atomic scale and reveal their intrinsic width that is found to be ≈7 nm corresponding to a sharp junction regime.
Mehdi Bouatou, Cyril Chacon, Aleksander Bach Lorentzen, Huu Thoai Ngo, Yann Girard, Vincent Repain, Amandine Bellec, Sylvie Rousset, Mads Brandbyge, Yannick J. Dappe, and Jérôme Lagoute Adv. Funct. Mater. 2022, 2208048 doi
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